Site Map | English / 繁中 / 简中
   
  Pure-play Wafer Foundry
 
Pure-play Wafer Foundry
Technology
Overview
GaAs Technologies
InGaP HBT
Super High fmax HBT
GaAs PHEMT
0.5um D-Mode T-Gate PHEMT
0.5um Switch PHEMT
0.25um E/D-mode LN PHEMT
0.25um D-Mode T-Gate PHEMT Power Process
HFET
GaN HEMT
Integrated Passive Devices
THz Schottky Diode
Varactor Diode
InP HBT Technologies
GaN Power Electronics Technologies
Optoelectronics Technologies
Foundry Services
  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> GaAs PHEMT > 0.25um D-Mode T-Gate PHEMT Power Process
 
0.25um D-Mode T-Gate PHEMT Power Process
   
 

This 0.25um low cost D-Mode T-Gate process has been developed using low cost optical stepper lithography for transceiver components of up to 40 GHz and also for high operating voltage.

Download PDF

GCS’ 0.25um T-Gate PHEMT features:
  • Low-cost optical stepper lithography process
  • Extremely high fmax (>200GHz)
  • Very high breakdown voltage (>20V)
Small Signal Performance
Small Signal Performance
  • fT > 60 GHz
  • fmax > 200 GHz
  • Gmax > 15 dB at 40 GHz
Device
Parameters 		Typical
Values

Idss @Vgs=2V

270mA/mm

Imax @Vgs=0.9V

500mA/mm

Vp @Ids=1mA/mm

-1V

Gm @Vgs=-0.3V

330mS/mm

BVgd @Igd=1mA/mm

>20V